ESR ultra-rendah, Kapasitor Dielektrik Keramik RF/Microwave

ESR ultra-rendah, Kapasitor Dielektrik Keramik RF/Microwave

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Deskripsi Produk

Atribut Produk

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Deskripsi Produk

Atribut Produk

Model No: DLC75N(0201)

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Deskripsi Produk

DLC75N adalah MLCC RF Q Tinggi ESR Sangat Rendah

DLC75N ESR ultra-rendah, Kapasitor Dielektrik Keramik RF/Microwave

DLC75N(0201)

Tabel Kapasitansi DLC75N

Capacitance (pF)	Code	Tolerance	Rated Voltage	Capacitance (pF)	Code	Tolerance	Rated Voltage	Capacitance (pF)	Code	Tolerance	Rated Voltage
0.2	0R2	A, B, C, D.	25V Code 250	1.7	1R7	A, B, C, D.	25V Code 250	6.2	6R2	B, C,	25V Code 250
0.3	0R3			1.8	1R8			6.8	6R8
0.4	0R4			1.9	1R9			7.5	7R5
0.5	0R5			2.0	2R0			8.2	8R2
0.6	0R6			2.1	2R1			9.1	9R1
0.7	0R7			2.2	2R2			10	100	F, G, J.
0.8	0R8			2.4	2R4			11	110
0.9	0R9			2.7	2R7			12	120
1.0	1R0			3.0	3R0			13	130
1.1	1R1			3.3	3R3			15	150
1.2	1R2			3.6	3R6			16	160
1.3	1R3			3.9	3R9			18	180
1.4	1R4			4.3	4R3
1.5	1R5			4.7	4R7
1.6	1R6			5.1	5R1
				5.6	5R6

Nomor komponen

Jenis dan ukuran tutup ujung DLC75N

Kinerja listrik

Item	Specification
Quality Factor (Q)	≥ 2000, measured at 1 ± 0.1 MHz, 1 ± 0.2 Vrms.
Insulation Resistance (IR)	≥ 10⁵ MΩ, at 25°C with rated voltage applied.
Rated Voltage (WVDC)	See capacitance table.
Dielectric Withstanding Voltage (DWV)	Apply 250% of rated voltage for 5 seconds.
Operating Temperature Range	-55°C ~ +150°C (Contact Dalicap Technology Co., Ltd. if higher temperature is required.)
Temperature Coefficient (TC)	0 ± 30 ppm/°C
Capacitance Drift	±0.2% or ±0.05 pF, whichever is greater.
Piezoelectric Effect	None

Eksperimen Lingkungan

Item	Specification	Method
Resistance to Soldering Heat	Appearance: No mechanical damage. Capacitance change: -1.0% ~ +2.0% or 0.5pF, whichever is greater. Q factor: Greater than 1000. Insulation resistance: Not less than the initial required value.	Preheat at 150°C ~ 180°C for 1 minute, immerse in solder at 260±5°C for 10±1 seconds. Test after cooling for 24±2 hours.
Thermal Shock	Appearance: No mechanical damage. Capacitance change: Not exceeding 0.5% or 0.5pF, whichever is greater. Q factor: Greater than 2000. Insulation resistance: Not less than 30% of the initial required value. DWV: Complies with the initial required value.	Test in accordance with MIL-STD-202, Method 107, Condition A. Expose at extreme temperatures for 15 minutes. Transition time from minimum to maximum operating temperature shall not exceed 5 minutes, for 5 cycles.
Moisture Resistance	Appearance: No mechanical damage. Capacitance change: Not exceeding 0.5% or 0.5pF, whichever is greater. Q factor: Greater than 300. Insulation resistance: Not less than 30% of the initial required value. DWV: Complies with the initial required value.	Test in accordance with MIL-STD-202, Method 106.
Steady State Humidity	Appearance: No mechanical damage. Capacitance change: Not exceeding 0.3% or 0.3pF, whichever is greater. Q factor: Greater than 300. Insulation resistance: Complies with the initial required value.	Test in accordance with MIL-STD-202, Method 103, Condition A. Apply 1.5V DC voltage under conditions of 85°C temperature and 85% humidity for 240 hours continuously.
Life	Appearance: No mechanical damage. Capacitance change: Not exceeding 2.0% or 0.5pF, whichever is greater. Q factor: Greater than 500. Insulation resistance: Not less than 30% of the initial required value.	Test in accordance with MIL-STD-202, Method 108. Apply 2 times the rated voltage at the extreme temperature for 2000 hours.

Kurva kinerja DLC75N

Pada kurva S21 kapasitor terdapat beberapa titik resonansi paralel (titik atenuasi berbentuk V). Frekuensi resonansi paralel pertama FPR merupakan frekuensi titik resonansi paralel terendah. Hal ini tidak dipengaruhi oleh ketebalan substrat dan konstanta dielektrik, tetapi dipengaruhi oleh arah pemasangan kapasitor. Arah horizontal berarti pelat elektroda internal kapasitor sejajar dengan substrat.

Pada kurva impedansi masukan [Zin] kapasitor, terdapat beberapa titik resonansi seri (titik atenuasi berbentuk V). Frekuensi resonansi deret pertama FSR merupakan frekuensi titik resonansi deret terendah. Pada titik ini, bagian imajiner dari impedansi masukan Im[Zin] adalah nol (Im[Zin] = 0). Di bawah FSR, bagian nyata Re[Zin] dan bagian imajiner Im[Zin] dari impedansi masukan tidak berubah linier terhadap frekuensi. Besar kecilnya FSR berkaitan dengan faktor-faktor berikut: struktur elektroda internal kapasitor, bahan substrat, ketebalan substrat, konstanta dielektrik substrat, arah pemasangan kapasitor pada substrat, dan ukuran bantalan substrat.

Definisi dan kondisi pengukuran:

Definisi: Kapasitor dihubungkan secara seri ke saluran mikrostrip. Artinya, kapasitor dijembatani antara kedua ujung saluran mikrostrip 50 ohm dengan celah. Kondisi pengukuran: Substrat Ro3006 Rogers dengan konstanta dielektrik 6,15, ketebalan substrat dipasang horizontal 10 mil, celah mikrostrip 6 mil, dan lebar mikrostrip 14,1 mil. Bidang referensi berada di tepi sampel. Semua data berasal dari model kelistrikan yang dihasilkan oleh Modelitik Inc., yang didasarkan pada sejumlah besar data pengukuran pada substrat berbeda.

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